vs-16tts..fppbf series, vs-16tts...fp-m3 series www.vishay.com vishay semiconductors revision: 10-nov-11 1 document number: 94381 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 16 a features ? designed and qualified for industrial level ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? compliant to rohs directive 2002/95/ec ? 125 c max. operatin g junction temperature ? halogen-free according to iec 61249-2-21 definition (-m3 only) applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor control, ups, welding, and battery charge description the vs-16tts..fp... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-220fp diode variation single scr i t(av) 10 a v drm /v rrm 800 v, 1200 v v tm 1.4 v i gt 60 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab full-pak output current in typical applications applications single-phase bridge three-phase bridge units capacitive in put filter t a = 55 c, t j = 125 c, common heatsink of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 10 a i rms 16 v drm /v rrm 800/1200 v i tsm 200 a v t 10 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-16tts08fppbf, vs-16tts08fp-m3 800 800 10 vs-16tts12fppbf, vs-16tts12fp-m3 1200 1200
vs-16tts..fppbf series, vs-16tts...fp-m3 series www.vishay.com vishay semiconductors revision: 10-nov-11 2 document number: 94381 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 95 c, 180 conduction, half sine wave 10 a maximum rms on-state current i rms 16 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 144 a 2 s 10 ms sine pulse, no voltage reapplied 200 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 2000 a 2 ? s maximum on-state voltage drop v tm 10 a, t j = 25 c 1.4 v on-state slope resistance r t t j = 125 c 24.0 m ? threshold voltage v t(to) 1.1 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a 16tts08fp, 16tts12fp - 100 maximum latching current i l anode supply = 6 v, resistive load 200 maximum rate of rise of off-state voltage dv/dt 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 90 ma anode supply = 6 v, resistive load, t j = 25 c 60 anode supply = 6 v, resistive load, t j = 125 c 35 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 3.0 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.2 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-16tts..fppbf series, vs-16tts...fp-m3 series www.vishay.com vishay semiconductors revision: 10-nov-11 3 document number: 94381 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 1.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab full-pak (94/v0) 16tts08fp 16tts12fp 80 90 100 110 120 130 024681012 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 16tts..fp series r (dc) = 1.5 c/w thjc 80 90 100 110 120 130 0 2 4 6 8 10 12 14 16 18 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 16tts..fp series r (dc) = 1.5 c/ w thjc 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 16tts..fp series t = 1 2 5 c j 0 5 10 15 20 25 0481216 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 1 6 tts. . fp se r i e s t = 1 2 5 c j
vs-16tts..fppbf series, vs-16tts...fp-m3 series www.vishay.com vishay semiconductors revision: 10-nov-11 4 document number: 94381 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 80 100 120 140 160 180 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j peak half sine wave on-state current (a) 16tts..fp series 80 100 120 140 160 180 200 0.01 0.1 1 pu lse tra in du ra t io n ( s) maximum non repetitive s urge current pe a k ha l f s ine wave forward current (a) versus pulse train duration. init ia l t = 125c no voltage reapplied rated v reapplied j rrm 16tts..fp series 1 10 100 1000 012345 t = 2 5 c j insta nt a neo us on-sta t e curre nt (a) in st a n t a n e o u s o n - st a t e v o l t a g e ( v ) t = 1 2 5 c j 1 6 tts. . fp se r i e s 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) steady state value (dc operation) sing le pulse thjc transient thermal impedance z (c/w) 1 6 tts. . fp se r i e s d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
vs-16tts..fppbf series, vs-16tts...fp-m3 series www.vishay.com vishay semiconductors revision: 10-nov-11 5 document number: 94381 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-16tts08fppbf 50 1000 anti static plastic tubes vs-16tts08fp-m3 50 1000 anti static plastic tubes vs-16tts12fppbf 50 1000 anti static plastic tubes vs-16tts12fp-m3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?95072 part marking information to-220fp pbf www.vishay.com/doc?95069 to-220fp -m3 www.vishay.com/doc?95456 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) in st a n t a n e o u s g a t e c u r r e n t ( a ) in st a n t a n e o u s g a t e v o l t a g e ( v ) t j = 25 c tj = 1 2 5 c b)recommended load line for vgd ig d fre q u e n c y li m it e d b y pg ( a v ) a)recommended load line for rated di/dt: 10 v, 20 ohms t r = 0.5 s, tp >= 6 s <= 30% rated di/dt: 10 v, 65 ohms t r = 1 s, t p >= 6 s (1) pgm = 40 , tp = 1 ms (2) pgm = 20 w, tp = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms t j = -10 c 1 6 tts. . fp se r i e s 2 - current rating, rms value 3 - circuit configuration: 4 - package: 5 6 - voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ab s = converter grade 8 - 08 = 800 v 12 = 1200 v 7 - full-pak device code 6 2 4 3 5 7 8 16 t t s 12 fp pbf v s - 1 1 - vishay semiconductors product environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95072 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 5 0.5 0.9 0.7 1.15 1.05 2.54 typ. 2.54 typ. 2.8 2.6 1.4 1.3 typ. 10 16.4 15.4 16.0 15.8 13.56 13.05 0.61 0.38 2.85 2.65 3.7 3.2 4.8 4.6 3.3 3.1 7.31 6.91 10.6 10.4 hole ? 3.4 3.1 (2 places) r 0.7 r 0.5 lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220 full-pak
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